Cu掺杂ZnO稀磁半导体磁电性能影响的模拟计算

在Cu重掺杂量摩尔数为0.02778–0.16667的范围内, 对ZnO掺杂体系磁电性能影响的第一性原理研究鲜见报道. 采用基于自旋密度泛函理论的平面波超软赝势方法, 用第一性原理计算了两种不同Cu单掺杂量Zn_1-xCu_xO (x=0.02778, 0.03125)超胞的能带结构分布和态密度分布. 结果表明, 掺杂体系是半金属化的稀磁半导体; Cu掺杂量越增加、相对自由空穴浓度越增加、空穴有效质量越减小、电子迁移率越减小、电子电导率越增加. 此结果利用电离能和Bohr半径进一步获得了证明, 计算结果与实验结果相符合. 在限定的掺杂量0.02778–0.0625 的条件下, Cu单掺杂量越增加、掺杂体系的体积越减小、总能量越升高、稳定性越下降、形成能越升高、掺杂越难. 在相同掺杂量、不同有序占位Cu双掺ZnO体系的条件下, 双掺杂Cu-Cu间距越增加, 掺杂体系磁矩先增加后减小; 当沿偏a轴或b轴方向Cu–O–Cu相近邻成键时, 掺杂体系会引起磁性猝灭; 当沿偏c轴方向Cu–O–Cu相近邻成键时, 掺杂体系居里温度能够达到室温以上的要求. 在限定的掺杂量0.0625–0.16667的条件下, 沿偏c轴方向Cu–O–Cu相近邻成键时, Cu 双掺杂量越增加, 掺杂体系总磁矩先增加后减小. 计算结果与实验结果变化趋势相符合.     

Ti掺杂NbSe2电子结构的第一性原理研究

采用基于密度泛函理论框架下的第一性原理平面波超软赝势方法, 计算了理想2H-NbSe₂和Ti掺杂2H-NbSe₂晶体的几何结构及电子结构; 对掺杂前后超胞的能带图、态密度及分波态密度图进行了分析. 结果表明, 掺杂后费米能级附近能量区域的电子态密度出现了较高的峰值, 且费米能级位置发生了改变. 理论上可以认为Ti的掺杂会使得NbSe₂的导电性增强, 有利于开发新型的电接触复合材料.     

N2H4在NiFe(111)合金表面吸附稳定性和电子结构的第一性原理研究

采用基于色散校正的密度泛函理论进行了第一性原理研究, 详细分析了肼(N₂H₄)在Ni₈Fe₈/Ni(111)合金表面稳定吸附构型的吸附稳定性和电子结构及成键性质. 通过比较发现, 肼分子以桥接方式吸附在表面的两个Fe原子上是最稳定的吸附构型, 其吸附能为-1.578 eV/N₂H₄. 同时发现, 肼分子在这一表面上吸附稳定性的趋势为: 桥位比顶位吸附更有利, 且在Fe原子上比在Ni原子上的吸附作用更强. 进一步分析了不同吸附位点上稳定吸附构型的电子结构、电荷密度转移以及电子局域化情况. 结果发现: 相同吸附位点的电子态密度图基本一致, 并且N原子的p轨道和与之相互作用的表面原子的d轨道之间存在态密度上的重叠; 吸附后电荷密度则主要从肼分子转移到表面原子之上; 在电子局域化函数切面图中也发现吸附后电子被局域到肼分子的N原子和相邻的表面原子之间. 这些电子结构的表征都充分说明肼分子与表面原子之间通过电荷转移形成了强烈的配位共价作用.     

Synthesis,spatial structure and spectral properties of pyrylo‐4 (thio) squaraines variously substituted in cyclobutene moiety

Synthetic routes have been developed to a number of (thio) squaraine dyes containing the residues of CH‐acids at the central cyclobutene ring. The electronic and spatial structure as well as the chemical conversions and optical behaviour of the compounds obtained have been studied both theoretically and by X‐ray diffraction analysis, ¹H NMR and electronic spectroscopy. As shown, the electronic nature and sterical characteristics of the central ring substituents give rise to some general conformational features and crystal packing regularities and also govern the spectral position of the first π–π^* absorption band. The structure–property relationships established in the study provide guidance for the purposeful design of deeply coloured (thio) squaraines. Copyright © 2015 John Wiley & Sons, Ltd.     

A PBC‐DFT study of electronic properties of substituted polythiophenes

The electronic properties of polythiophenes substituted with various electron‐withdrawing and electron‐donating groups are investigated by employing periodic density functional calculations. The polymer is modeled as infinite one‐dimensional system with periodic boundary condition along the molecular direction. The effect of substitution on bandgaps is studied with various substituents like alkyls, halogens, aromatic and alkoxy groups in different regioregular forms. The alkoxy groups are found to substantially lower the bandgap of unsubstituted polythiophene, and aromatic groups in head–head/tail–tail forms are found to increase the bandgap. Irrespective of the type of substituents, groups that show deviations in planarity in oligomeric forms have shown an increase in bandgap in contrast to the general perception that head–head linkage always results in an increase in bandgap. Our study also confirms the previous findings that scaling from the oligomer bandgaps poses serious limitation to the prediction of polymeric bandgaps and that it should be evaluated with the infinite polymer system employing periodic boundary condition. Copyright © 2015 John Wiley & Sons, Ltd.     

Computation of electronic structure and magnetic properties of strongly correlated materials with LDA+DMFT method

In this review, we describe general ideas of the LDA+DMFT method which merges dynamical mean-field theory (DMFT) and density functional theory (in particular the local density approximation (LDA)). Nowadays, the LDA+DMFT computational scheme is the most powerful numerical tool for studying physical properties of real materials and chemical compounds. It incorporates the advantage of DMFT to treat the full range of local dynamical Coulomb correlations and the ability of band methods to describe material-specific band dispersion caused by the lattice periodicity. We briefly discuss underlying physical ideas of LDA+DMFT and its mathematical implementation. Then different algorithms applied to solution of the DMFT impurity problem are briefly described. We then give examples of successful applications of the LDA+DMFT method to study spectral and magnetic properties of recently synthesized compounds like pnictide superconductors as well as classic charge-transfer systems NiO and MnO.     

Charge redistribution and a shortening of the Fe—As bond at the quantum critical point of SmO1–xFxFeAs

Many researchers have pointed out that there is a quantum critical point (QCP) in the F‐doped SmOFeAs system. In this paper, the electronic structure and local structure of the superconductive FeAs layer in SmO_1–xF_xFeAs as a function of the F‐doping concentration have been investigated using Fe and As K‐edge X‐ray absorption spectroscopy. Experiments performed on the X‐ray absorption near‐edge structure showed that in the vicinity of the QCP the intensity of the pre‐edge feature at the Fe‐edge decreases continuously, while there is a striking rise of the shoulder‐peak at the As edge, suggesting the occurrence of charge redistribution near the QCP. Further analysis on the As K‐edge extended X‐ray absorption fine structure demonstrated that the charge redistribution originates mostly from a shortening of the Fe—As bond at the QCP. An evident relationship between the mysterious QCP and the fundamental Fe—As bond was established, providing new insights on the interplay between QCP, charge dynamics and the local structural Fe—As bond in Fe‐based superconductors.     

Conjugate natural convection from an array of discrete heat sources: part 2 — a numerical parametric study

Coupled conduction and natural convection transport within a discretely heated cavity have been investigated numerically. One vertical wall of the cavity is composed of discrete, isoflux heat sources mounted in a substrate of finite thermal conductivity. The opposite vertical wall and the horizontal walls are assumed to be isothermal and adiabatic, respectively. The governing steady-state partial differential equations for the fluid and solid region are solved simultaneously using a control volume formulation, coupled with an additive correction multigrid procedure that increases the convergence rate of the solution. The fluid Prandtl number and heater/fluid thermal conductivity ratio are fixed at 25 and 2350, respectively, corresponding to a dielectric fluid (FC-77) and heaters manufactured from silicon. With increasing modified Rayleigh number (10⁴ < Ra_Lz^* < 109), the cavity flow becomes more boundary layer-like along the vertical walls, and multiple fluid cells develop in the central region. Thermal spreading in the substrate increases with decreasing modified Rayleigh number and with increasing values of the substrate/fluid thermal conductivity ratio (10⁻¹ <- R_s ≤ 10³). For large R_s, the discrete heat sources lose their thermal identity, and the streamlines and isotherms resemble those associated with a differentially heated cavity. Thermal spreading in the substrate also has a significant effect on circulation in the cavity and on maximum surface temperatures.     

电子封装、QFP和MCM热变形的实验及数值分析

0Introduction Anelectronicpackageisgenerallyconstructedwithanactivesiliconchip,mountisland,gold wires,leadframesandsoldersasshowninFig.1(a).Toprotectfromtheenvironment,thesilicon chipisusuallyencapsulatedinresin.SincethesematerialshavedifferentCTE(coeffic…     

塑封硅器件中介电薄膜的温湿效应分析(英文)

随着铜互连以及low-k电介质在超大规模集成电路中地广泛使用,low-k电介质的机械完整性及其对互连可靠性变得更加重要。影响介电膜的机械完整性和互连可靠性的因素包括介电膜的工艺制程,芯片与封装材料的相互影响,以及环境温度和湿度的影响。本文研究集中于了解环境温度和湿度对塑封硅器件中介电薄膜的可靠性影响。采用快速温度和湿度实验条件,对塑封硅器件中介电薄膜受水分和温度损伤的敏感性进行了分析。运用商业有限元(FEA)分析软件,对水分在塑封材料和硅器件中的扩散过程进行了建模及仔细分析。并对硅器件周边密封圈的防水分扩散效力进行了研究。通过这一系列实验与分析,对塑封硅器件中介电薄膜的温湿效应有了完整地了解,并提出和建立了相关的物理模型和经验公式。运用这物理模型和经验公式可对在各种使用环境温度和湿度条件下,塑封硅器件中介电薄膜的可靠性进行评估及分析。